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Quantum Dot TransistorAn isolated conductor may take on a charge, measured in coulombs for large objects. For a nano-scale isolated conductor known as a quantum dot, the charge is measured in electrons. A quantum dot of 1- to 3-nm may take on an incremental charge of a single electron. This is the basis of the quantum dot transistor, also known as a single electron transistor. A quantum dot placed atop a thin insulator over an electron rich source is known as a single electron box. (Figure 3433 (a)) The energy required to transfer an electron is related to the size of the dot and the number of electrons already on the dot. A gate electrode above the quantum dot can adjust the energy level of the dot so that quantum mechanical tunneling of an electron (as a wave) from the source through the insulator is possible. (Figure 3433 (b)) Thus, a single electron may tunnel to the dot.
If the quantum dot is surrounded by a tunnel barrier and embedded between the source and drain of a conventional FET, as in Figure 3433 (c) , the charge on the dot can modulate the flow of electrons from source to drain. As gate voltage increases, the source to drain current increases, up to a point. A further increase in gate voltage decreases drain current. This is similar to the behavior of the RTD and Deltt resonant devices. Only one kind of transistor is required to build a complementary logic gate.
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