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Power Gain

Author: Leonard Krugman

Before determining the power gain included in transistor circuits, some definitions must be considered. Figure 3-16 illustrates a signal generator Eg with an internal resistance Rg feeding into a load RL. The total power delivered by the generator transistor_basics_03-109.gif; the power dissipated in the load transistor_basics_03-110.gif. Since transistor_basics_03-111.gif then transistor_basics_03-112.gif.

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Fig. 3-16. Simplified transistor equivalent circuit for analysis of power gain.

By using conventional calculus methods for determining conditions for maximum power, it is found that the load power is maximum when Rg = RL. Under this condition the power available from the generator

transistor_basics_03-113.gif

The operating gain, G, of a network is defined as the ratio of the power dissipated in the load to the power available from the generator.

For the general transistor circuit of Fig. 3-9

transistor_basics_03-115.gif

Eq. (3-44)

The power dissipated in the load

transistor_basics_03-116.gif

Eq. (3-45)

The operating gain

transistor_basics_03-117.gif

Eq. (3-46)*

The available gain, AG, of a network is defined as tne ratio of the power dissipated in the load to the power available from the generator when the load is matched to the output resistance. When RL = ro = transistor_basics_03-118.gif, then transistor_basics_03-119.gif.

Substituting in equation 3-46, the available gain

transistor_basics_03-120.gif

Eq. (3-47)

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Eq. (3-48)

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Eq. (3-49) *

The maximum available gain, MAG, of a network is defined as the ratio of the power dissipated in the load to the power available from the generator when the generator internal resistance is matched to the input transistor resistance, and when the load resistance is matched to the transistor output resistance. In order to solve for the maximum power gain in terms of the open-circuit parameters, the image-matched input and output resistances, previously determined, are substituted in the operating gain equation 3-46. Then, the maximum available gain,

transistor_basics_03-123.gif

Eq. (3-50)

where

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Eq. (3-37)

and

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Eq. (3-41)

Substituting: equations 3-37 and 3-41 in equation 3-50, for r1 and r2,

transistor_basics_03-126.gif

Eq. (3-51)
which is equal to

transistor_basics_03-127.gif.

Eq. (3-52)

.transistor_basics_03-128.gif

Eq. (3-53)

from which derives

transistor_basics_03-129.gif

Eq. (3-54)

transistor_basics_03-130.gif

Eq. (3-55)*

For the typical point-contact transistor, when r11 = 250 ohms, r12 =100 ohms, r21 = 24,000 ohms, r22 = 12,000 ohms, and when assuming Rg = 50 ohms and RL = 8,000 ohms, the operating gain G, becomes

transistor_basics_03-131.gif

transistor_basics_03-132.gif

transistor_basics_03-133.gif

transistor_basics_03-134.gif

Notice that the stability factor,transistor_basics_03-135.gif , is transistor_basics_03-136.gif = 0.8. If the stability factor is greater than one, the numerical value of the quantity transistor_basics_03-137.gif must be negative, which indicates an unstable condition. For the typical junction transistor in which r11 = 550 ohms, r12 = 500 ohms, r21 = 1,900,000 ohms, and r22 = 2,000,000 ohms; when assuming Rg = 100 ohms and RL = 1,000,000 ohms, the operating gain

transistor_basics_03-138.gif

From equation (3-55)

transistor_basics_03-139.gif


Last Update: 2007-07-12