Current flow in a Semiconductor

Electron flow in an N-type semiconductor is similar to electrons moving in a metallic wire. The N-type dopant atoms will yield electrons available for conduction. These electrons, due to the dopant are known as majority carriers, for they are in the majority as compared to the very few holes thermal holes. If an electric field is applied across the N-type semiconductor bar in Figure below (a), electrons enter the negative (left) end of the bar, traverse the crystal lattice, and exit at right to the (+) battery terminal.

(a) N-type semiconductor with electrons moving left to right through the crystal lattice. (b) P-semiconductor with holes moving left to right, which corresponds to electrons moving in the opposite direction.

Current flow in a P-type semiconductor is a little more difficult to explain. The P-type dopant, an electron acceptor, yields localized regions of positive charge known as holes. The majority carrier in a P-type semiconductor is the hole. While holes form at the trivalent dopant atom sites, they may move about the semiconductor bar. Note that the battery in Figure above (b) is reversed from (a). The positive battery terminal is connected to the left end of the P-type bar. Electron flow is out of the negative battery terminal, through the P-type bar, returning to the positive battery terminal. An electron leaving the positive (left) end of the semiconductor bar for the positive battery terminal leaves a hole in the semiconductor, that may move to the right. Holes traverse the crystal lattice from left to right. At the negative end of the bar an electron from the battery combines with a hole, neutralizing it. This makes room for another hole to move in at the positive end of the bar toward the right. Keep in mind that as holes move left to right, that it is actually electrons moving in the opposite direction that is responsible for the appearant hole movement.