The ebook FEEE - Fundamentals of Electrical Engineering and Electronics is based on material originally written by T.R. Kuphaldt and various co-authors. For more information please read the copyright pages. |
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Semiconductor MaterialThe elements used to produce semiconductors are summarized in Figure below. The oldest elemental semiconductor material is germanium. Though, it is only used to a limited extent today. Silicon based semiconductors account for about 90% of commercial production of all semiconductors. Diamond based semiconductors are a research and development activity with considerable potential at this time. Compound semiconductors not listed include silicon carbide and III-V compounds such as gallium arsenide. III-VI compound semiconductors include: AlN, GaN, InN, AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs and InxGa1-xAs. Columns II and VI of periodic table, not shown in the figure, also form compound semiconductors. Group IIIA P-type dopants, group IV basic semiconductor materials, and group VI N-type dopants. The main reason for the inclusion of the IIIA and VIA groups in Figure above is to show the dopants used with the group IVA semiconductors. Group IIIA elements are acceptors, P-type dopants, which accept electrons leaving a hole in the crystal lattice, a positive carrier. Boron is the P-type dopant for diamond , and most the common dopant for silicon semiconductors. Indium is the P-type dopant for germanium. Group VA elements are donors, N-type dopants, yielding a free electron. Nitrogen and Phosphorus are suitable N-type dopants for diamond. Phosphorus and arsenic are the most commonly used N-type dopants for silicon; though, antimony can be used.
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